(EPROM). The device is organized into 64K words by. 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable. DESCRIPTION. The M is a , bit UV erasable and electrically programmable memory EPROM. It is organized as 65, words by 8 bits. MF1 STMicroelectronics EEPROM DISC BY SGS 11/95 datasheet, inventory, & pricing.
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This page was last edited on 8 Novemberat EPROMs had a limited but large number of erase cycles; the silicon dioxide around the gates would accumulate damage from each cycle, making the chip unreliable after several thousand cycles. While parts of the same size from different manufacturers are compatible in read mode, different manufacturers added different and sometimes multiple programming modes leading to subtle differences in the programming process.
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Non-volatile memory Integrated circuits Computer memory. Even dust inside the package can prevent eeproom cells from being erased. Each bit of the word is a 1 or 0, depending on the storage transistor being switched on or off, conducting or non-conducting. The floating-gate electrode has no connections to other parts of the integrated circuit and is completely insulated by the surrounding layers of oxide.
Like EPROM chips, such microcontrollers came in windowed expensive versions that were used for debugging and program development. Views Read Edit View history.
Because higher-density parts have little exposed oxide between the layers of interconnects and gate, ultraviolet erasing becomes less practical for very large memories. Photons of the UV light cause ionization within the silicon oxide, which allow the stored charge on the floating gate to dissipate. However, as this was not universal, programmer software also would allow manual setting of the manufacturer and device type of the chip efprom ensure proper programming.
The programming process is not electrically reversible. Retrieved from ” https: Exposure time for sunlight of one week or three years for room fluorescent lighting may cause erasure. The switching state of the field-effect transistor is controlled by the voltage on the control gate of the transistor.
Source and drain contacts are made to regions at the end of the channel. As the quartz window is expensive to make, OTP one-time programmable chips were introduced; here, the die is mounted in an opaque package so it cannot be erased after programming — this also eliminates the need to test the erase function, 2512 reducing cost. The first generation devices were fabricated with the p-MOS techology. A programmed EPROM retains its data for a minimum of ten to twenty years,  with many still retaining data after 35 or more years, and can be read an unlimited number of times without affecting 2512 lifetime.
Once programmed, an EPROM can be erased 27152 exposing it to strong ultraviolet light source such as from a mercury-vapor light. Each field-effect transistor consists of a channel in the semiconductor body of the device.
Often this label was foil-backed to ensure its opacity to UV. All articles with unsourced statements Eeorom with unsourced statements from October Commons category link from Wikidata Wikipedia articles with GND identifiers.
Storing data in the memory requires selecting a given address and applying a higher voltage to the transistors. A control gate electrode is deposited and further oxide covers it.
The same chip came in somewhat cheaper opaque OTP packages for production. Since the whole memory array is exposed, all the memory is erased at the same time. However, these require many weeks lead time to make, since the artwork for an IC eeproom layer must be altered to store data on the ROMs. This prompted larger capacity devices to introduce a “signature mode”, allowing the manufacturer and device to be identified by the EPROM programmer.
Cambridge University Press, p. From Wikipedia, the free encyclopedia. To erase the data stored in the array of transistors, ultraviolet light is directed onto the die. In other projects Wikimedia Commons.