CA3083 DATASHEET PDF

CA3083 DATASHEET PDF

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February 23, 2021

CA General Purpose High Current NPN Transistor Array. General Purpose High Current NPN Transistor Array. The is a versatile array of five high current. CA from Harris Corporation. Find the PDF Datasheet, Specifications and Distributor Information. CA Renesas / Intersil Bipolar Transistors – BJT datasheet, inventory & pricing.

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No dstasheet is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. In addition, two of these transistors Q1 and Q2 are matched at low current i. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Accordingly, the ca308 is cautioned to verify that data sheets are current before placing orders.

For information regarding Intersil Corporation and its products, see www.

CA datasheet(1/4 Pages) INTERSIL | General Purpose High Current NPN Transistor Array

The collector of each transistor of the CA is isolated from datasbeet substrate by an integral diode. To avoid undesired coupling between transistors, the substrate Terminal 5 should be maintained at either DC daasheet signal AC ground.

These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. A suitable bypass capacitor can be used to establish a signal ground.

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CA3083 PDF Datasheet浏览和下载

This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. The collector of each transistor of the CA is isolated from the substrate by an integral diode. Information furnished by Intersil is believed to be accurate and reliable. Actual forcing current is via the emitter datashset this test. A suitable bypass capacitor can be used to establish a signal ground.

Independent connections for each transistor plus a separate terminal for the substrate permit maximum flexibility in circuit design. For information regarding Intersil Corporation and its products, see www. They are not intended for use in Reflow solder processing applications.

However, no responsibility is assumed by Intersil or its subsidiaries for dataeheet use; nor for any infringements of patents or other rights of third parties which may result from its use. Independent connections for each transistor plus a separate terminal for the substrate permit maximum flexibility in circuit design. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of datazheet specification is not implied.

They are not intended for use in Reflow solder processing applications.

All Rights Reserved Intersil and design is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners.

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CA Datasheet(PDF) – Intersil Corporation

In addition, two of these transistors Q1 and Q2 are matched at low current i. All other trademarks mentioned are the property of their respective owners. Information furnished by Intersil is believed to be accurate and reliable.

These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. To avoid undesired coupling between transistors, the substrate Terminal 5 should be maintained at either DC or signal AC ground.

Actual forcing current is via the emitter for this test.

However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action.

Datzsheet Rights Reserved Intersil and design is a trademark owned by Intersil Corporation or one of its subsidiaries. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action.